INSTITUTE FOR ADVANCED MATERIALS AND RENEWABLE ENERGY

Staff> Dr. Z. Chen

Dr Z Chen, Ph.D

Postion: Scientist
Office: Lutz Hall, Room no 010
Phone: (502) 852-6338
Email: z0chen09@louisville.edu

Dr. Chen is a scientist at Institute for Advanced Materials & Renewable Energy. He received his B.S. and M.S. in Materials Engineering from Harbin Institute of Technology, China, in 1992 and 1995 and his Ph.D. in Materials Science at the University of Birmingham, UK in 2001.

Dr. Chen worked at University of California, Santa Barbara from 2002 to 2003 and Brookhaven National Laboratory from 2003 to 2006. Dr. Chen joined at Institute for Advanced Materials & Renewable Energy in July 2006. His research interests focus on understanding the processing-structure-property relationships of transition metal oxide, III-V compound nanowires and bimetallic catalyst nanoparticles with advanced TEM, SEM, and XRD.

Course

MSE # Materials Microstructural Characterization

Selected Publications

  1. Z. Q. Chen , C. Cvelbar , M. Mozetic et al. “Long Range Ordering of Oxygen Vacancies in -Fe 2O 3 Nanowires/Nanobelts” Manuscripts in preparation.
  2. M Chavan, Z Chen, G. Li et al ” Dimeric organization of the yeast oligosaccharyl transferase complex”, PNAS 103 (2006) 8947-8952 ( http://www.pnas.org/cgi/reprint/103/24/8947.pdf).
  3. Christian Speck, Zhiqiang Chen, Huilin Li, Bruce Stillman. “ ATPase-dependent Coopertive Binding of ORC and Cdc6 to Origin DNA”, Nature Structural & Molecular Biology, 12 (2005)   965-971 (http://www.nature.com/nsmb/journal/v12/n11/pdf/nsmb1002.pdf ) .
  4. Zhiqiang Chen, T. J. Green, Ming Luo, Hulin Li, “Visualizing the RNA molecule in the bacterially expressed vesicular stomatitis virus nucleoprotein-RNA complex”, Structure (Camb.) 12 (2004) 227-35.
  5. Z. Q. Chen, V. Misra, R. P. Haggerty, S. Stemmer. “Stability of Ru- and Ta-Based Metal Gate Electrodes in Contact With Dielectrics for Si-CMOS”, physica status solidi (b) 241 (2004) 2253-¬2267.
  6. S. Stemmer, Z. Chen, C.G. Levi et al. “Application of metastable phase diagrams to silicate thin films for alternative gate dielectrics,” Japanese Journal of Applied Physics 42 (2003) 3593-3597.
  7. S. Stemmer, Z. Q. Chen, W. J. Zhu et al. “Electron energy loss spectroscopy study of thin film hafnium aluminates for gate dielectric applications”, Journal of Microscopy 210 (2003) 74-79.