A fully equipped HF-CVD reactor is shown in the schematic. This reactor, primarily used for the synthesis of nanowires, is equipped with pressure controls, mass flow control system and an independent substrate heating capability.

At the top of the reactor is a pressure control valve (coupled with a pressure transducer) to control the pressure over a wide range of 4 mTorr to 100 Torr. Mass flow into the reactor can be controlled using a set of four mass flow controllers (HORIBA STEC).

The front quick flange connection is equipped with power feed-throughs for both filament and substrate heating. This flange is also equipped with a thermocouple setup for measuring the temperature of the substrate. The filament is held together using molybdenum plates coupled with quartz supports. The temperature of the filament, controlled by controlling the power supplied from an external variac, can be varied from 1250 C to 2500 C. The molybdenum plated also help in varying the distance between the filament and the substrate.

A pyrolytic boron nitride (p-BN) heater (GE Advanced Ceramics), capable of heating the substrate to 1000 C, is used for heating the substrate independently in the setup.